Innovative MBE approaches for generating sources of indistinguishable telecom single-photons on SOI – IMAGIN-SPS-SOI

The objective of this project is to develop single-photon sources (SPS) that emit at telecom wavelengths, a critical advancement necessary for enabling long-distance quantum communications and realizing a photonic quantum processor. The transparency windows of optical fibers enable quantum communication over extended distances. Since silicon is also transparent in this spectral range, it is possible to build on the extraordinary progress made in silicon-on-insulator technology to realize a photonic quantum processor. Unfortunately, there is currently no source capable of emitting indistinguishable "telecom" single photons on demand. The aim of this project is to address this gap by developing new approaches to the epitaxy of arsenide-based semiconductor QDs to create an ideal source of telecom single photons. I propose to explore an innovative method for growing these structures using molecular beam epitaxy (MBE). This process involves the formation of Group III metal nanodroplets, which enable local etching of a III-As layer, followed by InGaAs QD formation through the filling of the etched nanoholes. This novel approach is expected to facilitate the synthesis of large, symmetrical QDs with highly reproducible sizes and rapid optical emission, minimizing sensitivity to environmental noise and providing an excellent source of indistinguishable single photons at telecom wavelengths. The second aim of my project is to develop the epitaxy of the conceived III-As-based QDs on the silicon-on-insulator platform, allowing for the integration of multiple SPS providing efficient injection directly into a silicon photonic integrated circuit. This advancement will bring us significantly closer to realizing a quantum photonic processor compatible with quantum communications for the future quantum internet.