2D Heterostuctures Exploration for new generation of RF switches – 2DHEXPLOR

RF switches are essential for enabling wireless communication in many applications. Currently, RF switch technology is dominated by semiconductors (PIN diodes or FET) or electromechanical systems (MEMS). Emerging technologies are needed to find new functionalities while reducing the size, weight, power consumption, and cost (SWaP-C) of components. Two-dimensional materials (2DMs), particularly Transition-Metal Dichalcogenides (TMDs) like PtSe2, WS2, and WSe2, have the potential to address this challenge. Their exceptional properties, including bandgap and electronic mobility, make them strong candidates for the next generation of high-performance RF switches. They offer better efficiency, lower power consumption, and higher operating frequency bands (ranging from GHz to THz). The initial results from the consortium have validated the concept, but there are several challenges that need to be addressed. The first challenge concerns the deposition of single layers of TMD and heterostructures over a large area (up to a 2-inch wafer), including depth characterization of the 2DMs. The second challenge will focus on developing electromagnetic models to link the properties of TMDs with the modelling of RF switches. The final challenge is to effectively design RF switches based on 2DMs and implement them into RF systems as phase shifters for 6G multibeam antennas and radar applications. The scientific goal of the 2DHEXPLOR project is to provide the necessary tools to the scientific community to develop a new generation of RF components that can address industrial problems and increase TRL for these types of materials. The consortium comprises Thales Research and Technology, IETR, and UMPhy, which bring diverse and complementary expertise to the project.