HIGH efficiency LIGHT emission by inelastic tunneling – HighLights
This project aims at demonstrating high efficiency light sources based on inelastic tunneling through a tunnel junction and explore their potential for short range optical communications. Optical links are considered to be a promising venue for on-chip or chip-to-chip communication in order to reduce power consumption. In this context, light emission by inelastic tunneling effect (LEIT) has attractive features: i) ultrafast emission, ii) small footprint. Unfortunately, the efficiency is very low due to the dominant elastic current tunneling in light emitting metal-insulator-metal tunnel junctions. We aim at improving the efficiency by four orders of magnitude by reducing elastic tunneling while enhancing light emission using plasmonic resonators. We will combine the well-established knowledge of electronic transport in tunnel junctions with the nanophotonics know-how (microcavities, plasmonic resonators) to achieve a breakthrough in the efficiency of LEIT.
Project coordination
Jean-Jacques Greffet (Institut Optique Graduate School)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
Partner
C2N Université Paris-Saclay
LPS Université Paris-Saclay
ISMO Centre national de la recherche scientifique
LCF Institut Optique Graduate School
Help of the ANR 582,749 euros
Beginning and duration of the scientific project:
December 2022
- 48 Months