AlN NAnowire-BASEd light emitting diodes for deep UV Emission – ANABASE

ANABASE aims at sharing the complementary expertise of three academical partners (CEA-IRIG, CNRS-Néel,INL) to realize innovative AlN nanowire-based LEDs for deep UV emission. CEA-IRIG is at the cutting edge of the international research effort on NWs. Néel partner has a recognized expertise in electrical transport measurement. In rupture with the main stream approach, the chosen technical solution, i.e. the use of AlN-based nanowire (NW) heterostructures made possible by the breakthrough of high p-doping of AlN NWs achieved by CEA-IRIG jointly with CNRS-Néel aims at taking full advantage of the remarkable properties of these nano-objects. The INL partner will characterize the electrical doping level of AlN NWs using electrical AFM techniques. The Néel partner will be in charge of the advanced characterization of devices by electron beam induced current technique and catholuminescence. The Néel partner will be also in charge of p-type diamond electrode deposition (subcontracted to DiamFab Company, a spin-off of CNRS/Néel or to another actor in the field) for final device process.