Accelerating the demonstration of Gallium Oxide’s outstanding potential for Energy application – GOPOWER
GOPOWER project concerns “Basic Science for Energy” axis. Ga2O3 is an emerging ultra-wide bandgap semiconductor material for future high-power devices (beyond 6.5 kV) devoted to energy applications such as electric transportation and smart grids. All Ga2O3 power devices demonstrated so far have been unipolar (n-type based) in nature. P-type material is absolutely necessary for realization of bipolar devices operating at very high voltages. GOPOWER objective is to accelerate the demonstration of Ga2O3 outstanding potential with demonstration of p-type 2-inch Ga2O3 epi-layers, suitable for integration into a rectifying power PiN diode structure with breakdown voltage target of > 6,5 kV. To reach this goal, which represents a very important breakthrough in current Ga2O3 technology, GOPOWER ‘s international consortium will apply a multi route strategy based on unique expertise of material design (ab-initio calculation), growth, advanced material characterization and device modelling.
Madame EKATERINE CHIKOIDZE (Groupe d'études de la matière condensée)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
INL INSTITUT DES NANOTECHNOLOGIES DE LYON
INSP Institut des nanosciences de Paris
ICN2 FUNDACIO INSTITUT CATALA DE NANOCIENCIA I NANOTECNOLOGIA / Oxide nano-electronics group
GEMaC Groupe d'études de la matière condensée
Swansea University / Semiconductor and Electronic Materials Institute (SEMI)
Help of the ANR 467,271 euros
Beginning and duration of the scientific project: October 2021 - 42 Months