Diamond layer transfer for power applications – TRANS-DIAM
Improving the performance of power electronics components is a major challenge for reducing our energy consumption. The diamond material has several extreme characteristics, such as a wide band gap and high thermal conductivity which are far superior to those of other semiconductor materials. In spite of these promising characteristics for future high performance power devices, electronic components made of diamond have not been realized on an industrial scale. One limit is that commercially available diamond is much smaller with a higher cost than other semiconductor materials.
The TRANS-DIAM project intends to focus on a consortium rich in complementary knowledges around the diamond material, from the physics of solids, the growth, the development of transfer processes to the fabrication and characterization of electronic power components. In TRANS-DIAM project, an innovative diamond transfer process based on the Smart Cut™ technology is combined with the fabrication of state of the art Schottky diamond diode to demonstrate the first diamond component directly reported on an appropriate host substrate. Besides the fact that we consume very few diamond material without altering its qualities, such an innovative integration scheme will lead to better electrical performance.
The ambition of this project is to demonstrate an unprecedented technology on an international scale, allowing to glimpse answers to the needs of a clean, safe and effective energy.
Project coordination
Julie Widiez (Laboratoire d'Electronique et de Technologie de l'Information)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
Partnership
LETI Laboratoire d'Electronique et de Technologie de l'Information
INEEL Institut Néel - CNRS
DiamFab DIAMFAB
Help of the ANR 517,680 euros
Beginning and duration of the scientific project:
September 2019
- 48 Months