Electrostatic doping of 2D semiconductors on Gallium Nitride based heterostructures – 2DonGaN

2DonGaN proposes a new solution to efficiently dope 2D semiconductors (SC) grown on III-V heterostructures (e.g. AlGaN/GaN). Depending on the stack, these heterostructures induce spontaneous and piezoelectric polarizations that generate fixed positive or negative charges at their surface. These charges then generate n or p doping in the 2D SC. This project is based on (i) previous studies showing high crystalline quality growth of 2D on GaN and (ii) on III-V Lab knowledge to create 2D electron gas in HEMT structures. As demonstrators, we will fabricate n-type and p-type transistors and a high frequency field-effect transistor. The buffer and 2D SC will be grown by MOVPE and MBE at III-V lab and TRT respectively. The 2D materials will be transition metal dichalcogenides (MoSe2 or WSe2). The technological process will be ensured at IEMN with passivation layers and contact optimization. Electrical characterizations will be performed by IEMN, III-V Lab and ENS to assess materials and devices. High synergy on the design/fabrication of 2D/III-V devices and carrier transport mechanisms will lead to a deep understanding of 2D doping by III-V heterostructures (ENS).