INS - Ingénierie Numérique et Sécurité

MRAM (Magnetic Memory) based Architecture for Reliable and low power Systems – MARS

Submission summary

With the advent of memory technologies combining new features (non-volatility, density, performance, low power consumption, robustness), some architectural principles specifics into the field of embedded systems will eventually be reviewed. Such memory technology opens up particularly interesting in many application areas. The MARS project aims to explore the contribution of such technologies, including the integration of non-volatile MRAM technology (Magnetoresistive Random Access Memory) identifying and quantifying the levels and systems architecture benefits especially in terms of reliability, energy consumption and performance.
MRAM technology offers very intersting performances for non-volatile memory: access time (order of several nanoseconds), four times the density of SRAM, robustness against SEU (Single Event Upset), energy, endurance ... etc. To facilitate the use of this technology, it is necessary to identify and quantify the benefits that we may get in a context of critical embedded applications, particularly in the field of aeronautics and space. For instance, the robustness of this technology considering SEU is probably an important way of development for this technology. However it is clear that efforts in this project can be adapted to wider application areas.
Our efforts will be on the suitability of this technology based on embedded processors architectures with a focus on two aspects: the core of the processor and associated memory hierarchy. Regarding the processor core it is clear that innovative solutions will emerge from the technological advances of MRAM, either at the architectural level or logic level while optimizing Reliability / Energy / Performance. To the memory hierarchy that extends from the registers to the mass memory through the cache, the non-volatility and intrinsic qualities of MRAM will allow to propose new paradigms of storage access within a processor or system in general. A clearly identified bottleneck is the integration of storage elements within a system; over 80% of future microelectronics embedded systems will be composed by memories targeting performance, autonomy and reliability applications. It is therefore necessary to make an overall review on the system-level memory-adequacy calculation that will be strategic for future systems.
We therefore identify, relevant situations for the intended applications and then we will propose an evaluation methodology to quantify the impact of different strategies including a new memory hierarchy of processors, and core processor architecture taking into account intrinsic qualities of MRAM technology. This methodology based on simulation and emulation is then used to compare the effectiveness of different strategies under consideration. It will allow industrial and academic communities to identify situations where the benefits of MRAM integration technology will be decisive enough to constitute a clear added value.
The main novelty of this project is to focus architecture level, at the interface between advanced technology providing a new and profound review on the design of microelectronic embedded systems incoming from the MRAM technology.

Remark : The feasibility of integrating MRAM technology in integrated circuits has been demonstrated in previous projects (ANR SPIN CILOMAG ANR, ANR EMYR) through the design of experimental and prototype CMOS/Magnetic integrated circuits. This recent work led to the emergence of a unique French CMOS/MRAM die on which the MARS project will used to propose new architectural solutions using the expertise gained in the field of spintronics.

Project coordination

Lionel TORRES (UNIVERSITE DE MONTPELLIER II [SCIENCES TECHNIQUES DU LANGUEDOC]) – lionel.torres@lirmm.fr

The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.

Partner

INAC/SPINTEC COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES - CENTRE D'ETUDES NUCLEAIRES SACLAY
EADS FRANCE
UM2-LIRMM UNIVERSITE DE MONTPELLIER II [SCIENCES TECHNIQUES DU LANGUEDOC]
UPS IEF-LRI UNIVERSITE DE PARIS XI [PARIS- SUD]
CEA COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES - CENTRE D'ETUDES NUCLEAIRES SACLAY

Help of the ANR 893,969 euros
Beginning and duration of the scientific project: September 2011 - 36 Months

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