CRYstallised SrTiO3 barrier for ultra low RA magnetic tunnel junctions – CRYSTO

DEVELOPMENT OF A NEW CRYSTALLINE BARRIER BASED ON SRTIO3 FOR LOW RESISTANCE × AREA MAGNETIC TUNNEL
JUNCTIONS
The Magnetic Tunnel Junction (MTJ) based on Magnesium Oxide (MgO) is the core of all spintronic
components such as MRAM, nano-oscillators, magnetic logic,… The impedance and voltage
constraints have led to continuously decrease the MTJ Resistance × Area (RA) product upon
scaling. Today the MgO technology seems close to its physical limits. There is thus a need for a
new crystalline oxide barrier with lower band gap to pursue the RA decrease. The CRYSTO project
intends to address these critical aspects by providing an alternative crystalline barrier material
based on SrTiO3 (STO) that could offer both a low band gap while keeping attractive transport
properties. This new material, SrTiO3, would be generic for most cited applications, but only the
MRAM application is explored within the CRYSTO project with the participation of the industrial
partner CROCUS.
MATERIALS DEVELOPMENT AND MODELLING
The CRYSTO project is built around two complementary tasks. The first one corresponds to
materials development, that is to say elaboration of STO based MTJ by CEA/LETI and UMR CNRS
THALES, followed by integration of STO based MTJ into CROCUS technological process flow. Two
kinds of deposition technique are investigated: Ion Beam Deposition (IBD) by CEA/LETI and Pulse
Laser Deposition (PLD) by UMR CNRS THALES. The second task is dedicated to modelling and is
managed by CEA/SPINTEC.