Towards the first demonstator for a new non-volatile memory class based on Mott insulator AM4X8 – Mott-RAM

- optimization of the deposition process in reactive Ar/H2S plasma phase

- development of a «crossbar« demonstrator with Au pad size down to 100 nm at PTA grenoble

- downscaling effect demonstration:
Ron/Roff ratio is increased by a factot 10000 while decreasing the contact pads from 50 µm down to 500 nm

- retention time extrapolated up to 10 years at RT

- writing and erasing time of 50 ns and 100 ns respectively

Development of new substrates with Mo contact , with contact pads size in the 2µm to 500 nm range

2 articles:
E. Souchier, MP Besland et al. Thin Solid Films, 533, 55 (2013)
J. Tranchant et al. Thin Solid Films 533, 61 (2013)

1 patent

9 oral communications including 8 international talks

Information storage and more specifically non-volatile memories represent strategic issues in the field of micro-electronics. Nowadays Flash memories are one of the most frequently used non-volatile memories in mobile electronic devices, but however suffer from intrinsic limitations while downscaling. In that respect, the resistive RAM (RRAM or memristors) exhibiting a resistive switching between two stable resistive states stands as a promising technology.
Recently, we have discovered a new type of reversible and non-volatile transition in Mott-insulators family AM4X8. In recent works, we successfully deposited crystalline thin films which exhibit the same resistive switching. Our discovery has been protected by two patents which could give birth to a new class of non-volatile memories, so-called Mott-RAM. In that context, the main objective of the ANR project Mott-RAM, presented by the Institut des Matériaux Jean Rouxel (IMN-UMR 6502) and FIST is to show up the innovation potentiality of that new type of RRAM non-volatile memory. The project aims at confirming a new alternative and original technology to replace Flash memories. In that respect, the project Mott-RAM has two main objectives:
•Fabricate the first miniaturized demonstrator for a new RRAM class based on Mott insulator AM4X8,
•Control on obtained devices this new type of resistive transition in Mott insulators.
The “Mott-RAM” project coordinated by MP Besland (IMN) aims at bringing the demonstration of the potential of the AM4X8 compounds for a new type of RRAM non-volatile memories.