Graphene heterostructures with Nitrides for high frequency Electronics – GraNitE
GraNitE
Graphene heterostructures with Nitrides for high frequency Electronics.
Design, fabrication, and characterization of high quality Gr heterostructures with thin films of III-Nitride semiconductors
- Fabrication of Gr heterostructures with thin III-N layers grown by MBE or MOCVD on different kinds of substrates (Al2O3, SiC, GaN, Si). Two approaches will be followed to this aim: (i) transfer of CVD grown Gr from Copper to III-N; (ii) the direct growth of Gr on III-N and of III-N on Gr.<br />- Advanced structural and electrical characterization of the heterostructures to understand the mechanisms of current transport at the interfaces.<br />- Multiscale simulations aided design of Gr heterostructures with III-N multilayers suitable to achieve specific functionalities.<br />- Demonstration of metal/insulator/Gr/AlGaN/GaN vertical devices targeted for very low power dissipation, high current rating and high frequency (ft>1THz) performances.
- III-Nitride heteroepitaxy using MOCVD and MBE
- CVD growth of Graphene on SiC and III-Nitrides
- Graphene layer transfer on III-Nitride heterostructures
- Material characterizations (AFM, XRD, TEM)
- Device process using lithography, metal deposition, etching
- Electrical characterizations of materials with conductive AFM
- Electrical characterizations of electron devices (I-V, C-V...)
- Delivery of AlGaN/GaN HEMTs grown on Silicon
- Graphene layer transfer on HEMTs
- Successful CVD growth of Graphene on SiC and AlN
- Optimization of HEMT structure design
- III-N growth on Graphene
- 1 publication in international journal (Physica Status Solidi a)
- 1 oral presentation in an international conference (EMRS Spring 2016)
- 1 poster presentation in an international conference (ICNS 2017)
The GraNitE project aims at the realization of high quality graphene (Gr) heterostructures with thin films of Nitride (III-N) semiconductors, i.e. GaN, AlN and related alloys (AlxGa1-xN). These will be employed for the implementation of novel vertical devices, such as the Gr/AlGaN/GaN Schottky diode with a gate modulated Schottky barrier for logic applications, and the Hot Electron Transistor with Gr Base for ultra-high-frequency (ft>1THz) applications. In particular, taking benefit from the wide bandgap of III-N and from the high mobility 2DEGs of Gr and AlGaN/GaN interface, excellent Ion/Ioff ratios (>1e8) and very low off-state current (Ioff
Project coordination
Yvon Cordier (CNRS/Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA))
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
Partner
TopGaN
CNRS/CRHEA CNRS/Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA)
STMicroelectronics
Help of the ANR 134,362 euros
Beginning and duration of the scientific project:
December 2015
- 36 Months
