Large Size Diamond MOSFET – LSD-MOSFET
The ambition of the LSD-MOSFET project is to fabricate large size diamond metal oxide semiconductor field effect transistor on large size substrates operating at high voltage/high temperature. Project partners have recently developed new concepts based on the specific physical properties of ultra large gap semiconductors (including deep depletion transistor and electro-optical control). The objective of LSD-MOSFET is to realize new smart diamond devices based on a Finger FET architecture coupled with a non-volatile photo-switch in order to reach ambitious performances (1 kV, 1 A at 250°C) on large substrates (1/2 inch) This scientific and technological breakthrough will be the first step of an approach to introduce diamond-based components in power electronics systems. In the long term, diamond will thus meet the main requirements of low-carbon power electronics applications.
Monsieur Julien Pernot (Institut Néel)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
NEEL Institut Néel
LAPLACE LABORATOIRE PLASMA ET CONVERSION D'ENERGIE
Help of the ANR 584,079 euros
Beginning and duration of the scientific project: December 2021 - 48 Months