For over 40 years, microelectronics has rapidly grown mainly based on silicon technology. Indeed thanks to its low cost, abundance and the insulating, protective and passive properties of its oxide, silicon remains the material of choice for micro and nanoelectronics. Silicon has however limitations when looking to high mobility and high frequency operations. Thus, it is widely expected that around the 11-15 nm technology node, strained silicon may run out of steam and alternative channel materials such as germanium or III-V materials will be required to achieve the low power performance targets set out in the International Technology Roadmap for Semiconductors (ITRS). However, these alternative materials which present intrinsic higher mobility and allow operation at higher frequencies, have to be significantly improved since their oxide, unlike SiO2, is not insulating and impervious enough for real applications. Despite the recent revival of the quest for the III-V dielectric Graal, and despite recent improvements in the Molecular Beam Epitaxy (MBE) or Atomic Layer Deposition (ALD) deposition processes of high-k dielectrics (Al2O3, HfO2, ZrO2, GdSiO, HfPrO, HfSiO, ...) the results are far from the targets.
Within the project SAGe III-V, we propose a completely different approach using very thin biomembrane-like self-assembled nanodielectrics (SANDs) as the insulating layer for Germanium and III-V materials, to give them these viable properties allowing their use in next generation devices. These self-assembled organic gate dielectrics present the main advantage to be deposited at room temperature from solution, exhibit good uniformity over very large areas, be patterned using standard microelectronic etching methodologies and yield to smooth, nanostructurally well-defined, strongly adherent, virtually pinhole-free thin films. Thus, the performances targeted for this project concern dielectrics with leakage current densities as low as 10-9 A/cm2, with interface state density of about 1010 cm-2eV-1 and with dielectric constant k from 20 up to 50.
While applications for Self-assembled nanodielectrics on III-V and Ge semiconductors are foreseen, they remain at a long-term perspective and our objectives clearly qualify this project at a fundamental level. The co-integration of the SANDs with the Ge and III-V devices will be approached by a series of elementary studies without the realization of a hybrid device itself being considered. Indeed, it is necessary to answer two fundamental questions before being able to consider a true co-integration: The thermal resistance of the molecular layers and the compatibility of SANDS with usual materials of micro-electronics.
Monsieur Bruno Jousselme (COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES - CENTRE D'ETUDES NUCLEAIRES SACLAY) – email@example.com
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
SPCSI-CEA Saclay COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES - CENTRE D'ETUDES NUCLEAIRES SACLAY
CINaM-CNRS Université Aix-Marseille CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - DELEGATION REGIONALE PROVENCE CORSE
IEMN-CNRS CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - DELEGATION REGIONALE NORD-PAS-DE-CALAIS ET PICARDIE
CNRS DR12 - IM2NP CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE - DELEGATION REGIONALE PROVENCE CORSE
Help of the ANR 660,170 euros
Beginning and duration of the scientific project: December 2011 - 36 Months