DS07 - Société de l'information et de la communication

Planar THz GaN Gunn nanodiodes based Emitter/Receiver for ultra high speed communications – GANGUN

Submission summary

GaNGUN The project aims to achieve a THz oscillator based on Self-Switching Diodes (SSD) in gallium nitride. SSD devices (GaN based) have been shown to have to capability to produce current oscillations at 300 GHz, under specific conditions and topologies (strong polarization). Based on technological SSD results already obtained within consortium, up to 325 GHz for THz detectors, GaNGUN proposes new epitaxial structures, new topologies and integration into a guiding structure to achieve this THz oscillator. To achieve this goal, simulation skills, materials growth, technological processes and characterization have been merged in this international project.

Project coordination

Marie LESECQ (Institut d'électronique, de microélectronique et de nanotechnologie)

The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.

Partner

CINTRA
IEMN Institut d'électronique, de microélectronique et de nanotechnologie

Help of the ANR 249,757 euros
Beginning and duration of the scientific project: October 2017 - 36 Months

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