Gallium Oxide based deviceS for Power ELectronics – GOSPELS
GOSPEL’s aim is the design and demonstration of a novel vertical p-NiO/n-?-Ga2O3 power diode, optimized for high power electronics. This will be done by carefully conceiving, designing and engineering of devices with the appropriate architectures along with controlled thermal, electrical and structural properties for layers and interfaces. The ambitiousness and innovative nature of GOSPEL are linked to both the fundamental exploration of the emerging semiconductor potential of these oxide materials and the delivery (for the first time in the world) of a PLD-grown vertical (Al)Ga2O3/(Mg)NiO power device, and of its transfer to a heat sink. This project brings together partners who are international references in their fields of expertise. It will be based on a continuous flow/feedback between modelling, wafers, process and characterisations within the consortium so as to progressively/quickly resolve bottlenecks and allow fabrication of Ga2O3 power devices for the first time in France.
Project coordinator
Monsieur Nicolas DEFRANCE (UMR 8520 - IEMN - Institut d'Electronique, de Microélectronique et de Nanotechnologie)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
Partner
SOLEIL Synchrotron SOLEIL
NANOVATION
UMPhy Centre national de la recherche scientifique
IEMN UMR 8520 - IEMN - Institut d'Electronique, de Microélectronique et de Nanotechnologie
COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Help of the ANR 643,743 euros
Beginning and duration of the scientific project:
December 2022
- 42 Months
