Ferroelectric (FE) oxides are efficient functional ingredients for the development of tomorrow’s electronics, for instance in low-power memories and bio-inspired devices. Their ferro-, piezo- and flexo-electric properties are always coupled to strain imposed by epitaxial growth onto an oxide substrate. We propose to free the functional stack from its parent substrate and transfer the released membrane onto silicon wafers or flexible polymers thanks to newly water-soluble sacrificial layers. Alternative transfer via 2D-nanosheets as seed templates will be prospected and compared. Recent works show that the genuine strain state can be preserved, and even pushed further when resorting to flexible substrates. FLEXO project will explore the functional properties under tunable strain in a range unachievable for epitaxial growth processes. This will extend the potential of these FE oxides to functional devices with CMOS on Si compatibility, or for flexible electronics.
Monsieur Yves Dumont (Groupe d'études de la matière condensée)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
SPMS Structures, propriétés et modélisation des solides
GEMaC Groupe d'études de la matière condensée
C2N Centre de Nanosciences et de Nanotechnologies
UMPhy Unité mixte de physique CNRS/Thalès
ISCR INSTITUT DES SCIENCES CHIMIQUES DE RENNES
Help of the ANR 560,481 euros
Beginning and duration of the scientific project: May 2022 - 48 Months