High-Efficiency Epitaxial CIGS-Silicon Tandem Solar Cell – EPCIS
The PV sector is experiencing a fast growth and is becoming one of the main pillars for the energy transition. The goal of 30% efficiency (challenging roadmap issued during COP21, initiated by IPVF and named “30-30-30”) will be extremely difficult to reach with classical solar cells based on single junctions. On contrary, tandem cells could reach 43% theoretically by combining a VIS/NIR bottom cell, Si-made, with a top cell collecting the blue/UV range of the solar spectrum, which could be a CIGS top cell specially optimized with a bandgap about 1.7 eV. We propose a new and disruptive approach based on using wideband gap III-V (GaP-based) buffer layers between Si and CIGS. We expect that epitaxial (CIGS/III-V/Si substrate) developed in this project will reach 18% at 1.7 eV. Original designs of (CIGS/III-V/Si/Si substrate) tandem cells with two terminals and a efficiency of 25% are proposed at the end of the project.
Monsieur Olivier DURAND (Institut Fonctions Optiques pour les Technologies de l'informatiON)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
Inst.FOTON Institut Fonctions Optiques pour les Technologies de l'informatiON
UMR-IPVF Institut de recherche et développement sur l'énergie photovoltaïque d'Ile-de-France
IMN INSTITUT DES MATERIAUX JEAN ROUXEL
INL INSTITUT DES NANOTECHNOLOGIES DE LYON
Help of the ANR 735,606 euros
Beginning and duration of the scientific project: November 2020 - 42 Months