The RF switch is a key element of the Front End Module where it is used to modify the path of the received signal. The deployment of 5G networks and beyond call for new technological solutions enabling faster RF switches. Switches based on two-dimensional materials seems well adapted for resistive switching. These devices are non-volatile (zero static power consumption), and particularly promising for high-speed operation since the RON * COFF product scales favorably with the junction area. To date, only few experimental data are available, and a theoretical understanding of the transport process and of the switching mechanism is lacking in the vertical switches. The aims of the SWIT project are respectively:
- to elucidate the mechanisms at the origin of the resistive switching and the charge transport in the ON and OFF state.
- to develop an optimized non-volatile RF switches to assess the potential for high-frequency applications (above 30 GHz) for 5G and beyond.
Monsieur Emiliano PALLECCHI (Institut d'électronique, de microélectronique et de nanotechnologie)
The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.
IEMN Institut d'électronique, de microélectronique et de nanotechnologie
LETI Laboratoire d'Electronique et de Technologie de l'Information
IMEP-LaHC Institut de la Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et de Caractérisation
Help of the ANR 597,567 euros
Beginning and duration of the scientific project:
September 2019
- 48 Months
