DS03 - Stimuler le renouveau industriel

Micro and Nano Electromechanical Systems based on Gallium Nitride – NEMS-GAN

Submission summary

MEMS successes are today based on top-down microfabrication and mostly silicon material. NEMS miniaturized mechanical structures offer promising routes for increasing devices sensistivity. However, many sensors markets in industry, exploration, and defense cannot use current MEMS/NEMS technologies because or performance degradation in harsh environments: high temperatures, high vibrations/accelerations, radiations, or corrosive media. In this context, NEMSGAN proposal aims at investigating the use of novel III-N materials and demonstrate the first nitride NEMS integrated inertial sensors. These devices would withstand harsh environments in particular temperatures from 500K to 800K due to epitaxial nitrides robustness and specific refractory technologies developped for the transducers. Nitride NEMS will also take advantage of novel piezo-response phenomena for improved transducers response. They will combine nanostructures to micro-sized moving parts for optimizing the signal-to-noise ratio, having low power consumption and a high measuring bandwidth.

Project coordinator

Monsieur Marc Faucher (Institut d'électronique, de microélectronique et de nanotechnologie)

The author of this summary is the project coordinator, who is responsible for the content of this summary. The ANR declines any responsibility as for its contents.

Partner

CRHEA Centre de recherche sur l'hétéroépitaxie et ses applications
PMC Physique de la Matière condensée (PMC)
IEMN Institut d'électronique, de microélectronique et de nanotechnologie

Help of the ANR 492,701 euros
Beginning and duration of the scientific project: February 2018 - 48 Months

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